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filingDate 2003-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2005-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2005-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-6846754-B2
titleOfInvention Boron phosphide-based semiconductor layer and vapor phase growth method thereof
abstract A vapor-phase growth method for forming a boron-phosphide-based semiconductor layer on a single-crystal silicon (Si) substrate in a vapor-phase growth reactor. The method includes preliminary feeding of a boron (B)-containing gas, a phosphorus (P)-containing gas, and a carrier gas for carrying these gases into a vapor-phase growth reactor to thereby form a film containing boron and phosphorus on the inner wall of the vapor-phase growth reactor; and subsequently vapor-growing a boron-phosphide-based semiconductor layer on a single-crystal silicon substrate. Also disclosed is a boron-phosphide-based semiconductor layer prepared by the vapor-phase growth method.
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