| abstract |
In a semiconductor pressure sensor device comprising a housing ( 1 ) having a cavity ( 3 ), a semiconductor sensor chip ( 2 ) mounted within the cavity, leads ( 4 ) for conveying pressure detection signals, and bonding wires ( 6 ) electrically connecting the sensor chip and the leads, a sensitive portion ( 2 a ) of sensor chip ( 2 ), leads ( 4 ) and bonding wires ( 6 ) are covered with an electrically insulating fluorochemical gel material which has a penetration of 30-60 according to JIS K2220, a Tg of up to −45° C., and a degree of saturation swelling in gasoline at 23° C. of up to 7% by weight. The sensor device is improved in operation reliability and durability life. |