Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdad00677b9268c26e005a9e03a7b9dd |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B69-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823462 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76232 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-105 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 |
filingDate |
2002-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2005-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea123b81edf348abf284473ffce5e7e1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_764aebc5acad4c09f0a47128d2cb0d0b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f9a427c6c94f0e4410e86aa7f4198049 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_212da6c57b97814b7e0edbdd0a0f34f6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d42b8f537ccd1d760b90e3cbc3c573fc |
publicationDate |
2005-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-6844590-B2 |
titleOfInvention |
Semiconductor device with trench isolation between two regions having different gate insulating films |
abstract |
The major surface of a semiconductor substrate of a semiconductor device includes first and second regions and a boundary area therebetween. A first gate insulating film and a first gate electrode are formed in the first region. A second gate insulating film different from the first gate insulating film and a second gate electrode are formed in the second region. A device isolation region is formed in the boundary area. This device isolation region includes a trench formed in the major surface, and an insulating layer having a portion buried in the trench and a portion projecting upward from the major surface. The bottom of the trench has depths different with portions. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009203186-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012086070-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8076713-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8252661-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010291750-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7518915-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7534684-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7719061-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7709347-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007171720-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009250747-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007029622-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007284645-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7968934-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009014776-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9324709-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9012968-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9299715-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9412750-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011073933-A1 |
priorityDate |
2001-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |