Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f4a8faea375370b67c9d71e67db32bcd |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-035281 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-056 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-061 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0384 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1804 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-04 |
filingDate |
2003-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2005-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_02ea6dedad9c5d5701cfd40cac525b9d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b9f70cc0701566bc81df3e68523925af http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3adaa442d7be29abac0bdfcab4b0caaa http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec878f2e85a02cdb15ca938478776d6d |
publicationDate |
2005-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-6844568-B2 |
titleOfInvention |
Photoelectric conversion device and manufacturing process thereof |
abstract |
There is disclosed a photoelectric conversion device which is manufactured by depositing numerous crystalline semiconductor particles of one conductivity type on a substrate having an electrode of one side to join the crystalline semiconductor particles to the substrate, interposing an insulator among the crystalline semiconductor particles, forming a semiconductor layer of the opposite conductivity type over the crystalline semiconductor particles, and connecting an electrode to the semiconductor layer of the opposite conductivity type, in which the insulator comprises a mixture or reaction product of polysiloxane and polycarbosilane. The insulator interposed among the crystalline semiconductor particles is free from defects such as cracking and peeling, so that a low cost photoelectric conversion device with high reliability can be provided. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102725866-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007021580-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007148336-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010227431-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7528207-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7759158-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7858427-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008057220-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006213548-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9276150-B2 |
priorityDate |
2002-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |