| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66507 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-43
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2002-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2005-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9740d1931e4f32559a1da48a5bf9e4a |
| publicationDate |
2005-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6838366-B2 |
| titleOfInvention |
MOS transistors and methods for manufacturing the same |
| abstract |
MOS transistors and a methods for manufacturing the same are described. In one such MOS transistor, source and drain regions 12 are formed in an element region on an Si substrate 11 , and a gate electrode 14 including silicide is formed through a gate oxide film 13 over a channel region between the source and drain regions 12 . The gate electrode 14 is formed such that it includes a polysilicon gate electrode 14 and silicide 142 on an upper portion thereof. At least a thickness of and metal to be contained in the silicide 142 on the gate electrode 14 are selected regardless of silicide 121 provided over the source and drain regions 12 . The thickness of the silicide 142 provided over the gate electrode 14 may be greater than the thickness of the silicide 121 provided over the source and drain regions 12. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7479434-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10263005-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007178683-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014191316-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010163830-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015118813-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007029628-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9799667-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8846527-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011053815-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005121059-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011065618-A1 |
| priorityDate |
2001-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |