http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6835617-B2

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classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-90
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-84
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
filingDate 2003-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2004-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6ef580361037a184f6bc856d56c759e1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ef3ff0be7f09460bf1aade6b6bd26f7c
publicationDate 2004-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-6835617-B2
titleOfInvention Methods of forming hemispherical grained silicon on a template on a semiconductor work object
abstract The present invention provides a method of preparing a surface of a silicon wafer for formation of HSG structures. The method contemplates providing a wafer having at least one HSG template comprising polysilicon formed in BPSG, the HSG template being covered by silicon dioxide. The wafer is treated with a cleaning agent to clean the surface of the wafer. Next, the wafer is treated with a conditioning agent. The conditioning agent removes native oxide from the HSG template without excessively etching structural BPSG. Preferably, the conditioning agent also removes a thin layer of polysilicon on the HSG template. The wafer is then transferred to a process chamber for HSG formation.
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priorityDate 1999-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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