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filingDate 2003-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2004-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2004-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-6828248-B1
titleOfInvention Method of pull back for forming shallow trench isolation
abstract A method of pull back for a shallow trench isolation (STI) structure is provided. The method firstly provides a substrate having a hard mask layer disposed thereupon and a dielectric layer above the hard mask layer. Then a trench is formed within the hard mask layer, the dielectric layer and the substrate. Finally, the hard mask layer and the dielectric layer are pulled back by using a halogen containing etching process.
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