| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_71af545dc283b150d18f05481442f20a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02461
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02658
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02543
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate |
2003-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2004-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cc1c06a622b597d32c076a0801ac344d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cd81a3d4a70898d2d485dbd2bed4dadb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5c185932d4caffb5f17b83578b98c48e |
| publicationDate |
2004-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6828169-B2 |
| titleOfInvention |
Method of forming group-III nitride semiconductor layer on a light-emitting device |
| abstract |
A method of forming a group-III nitride semiconductor layer on a light-emitting device. First, a substrate is provided. Next, a buffer layer is formed on the substrate. A hydrogen treatment is performed on the buffer layer. Finally, a group-III nitride semiconductor layer is formed on the buffer layer. According to the present invention, a hydrogen treatment is performed on the buffer to prevent corrosion during subsequent process and remove particles from the buffer layer. Thus, the structure of the epitaxy layer following formed on the buffer layer is enhanced. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003198301-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008157079-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7034330-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7488987-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005090032-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004079959-A1 |
| priorityDate |
2002-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |