http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6821617-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_efbfdc7316d3b1b7ceaee5366a61b6e0 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-265 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-34 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-565 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-544 |
| filingDate | 2002-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2004-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c49bed6d7bf344b287429c106f446297 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d493993310416b1df594ff4de0d6ea44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ef2586257e10f089888257ab6f170ca9 |
| publicationDate | 2004-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-6821617-B2 |
| titleOfInvention | Wafer and production thereof |
| abstract | A method of producing a wafer comprising conducting a baking treatment on a sintered silicon carbide cut in the form of wafer. An embodiment in which the temperature for the above-mentioned baking treatment is 1350° C. or more, embodiments in which the temperature for the above-mentioned baking treatment is 1400 to 1550° C. and the pressure for the above-mentioned baking treatment is 10<-4 >Torr or less, and the like are preferable. A wafer which can be produced by the above-mentioned method of producing a water. Embodiments in which the above-mentioned flexural strength measured by a flexural test method (JIS 1601) is 700 MPa or more, the above-mentioned element composition ratio Si/C in all parts is 0.48/0.52 to 0.52/0.48, and the above-mentioned density is 2.9 g/cm<3 >or more.A high quality wafer improving thermal shock resistance and generating no crack by thermal shock, and a method which can produce this wafer efficiently are provided. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7166523-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7150850-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004259717-A1 |
| priorityDate | 2001-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.