| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38fd8eaeec59db9b496e4b24bcd8a7fb |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-1209
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-1064
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0655 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-06256 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-12 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-0625 |
| filingDate |
2002-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2004-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f59befc859fa5fdad2432d0e837c0ed1 |
| publicationDate |
2004-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6810058-B2 |
| titleOfInvention |
Semiconductor laser with gain waveguide layer providing transversal and longitudinal mode stability |
| abstract |
A high-power semiconductor laser with a gain waveguide layer tailored to provide transverse and lateral mode stability is disclosed. The gain waveguide layer has a width that varies in proportion to the power distribution within the layer. Narrow sections of the gain waveguide layer provide transversal stability by filtering out higher order modes, while the wide sections reduce the average four-wave mixing and the resultant longitudinal modal instabilities. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8451872-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004208450-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8179931-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010142568-A1 |
| priorityDate |
2002-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |