| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d49de4efacc50371121175d075552f39
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36f8253f3d0d59bcd9259217d4385d10 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-32 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
| filingDate |
2002-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2004-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_777c30364c28295ae5ead314c14ff335
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d70267776a8c874cdf4420d7ff69bcb9 |
| publicationDate |
2004-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6797638-B2 |
| titleOfInvention |
Plasma-etching process for molybdenum silicon nitride layers on half-tone phase masks based on gas mixtures containing monofluoromethane and oxygen |
| abstract |
A method for etching phase shift layers of half-tone phase masks includes etching a phase shift layer by using a plasma which is obtained from CH 3 F and O 2 . A high cathode power is used for the etching. The method has a very high selectivity between the substrate and the phase shift layer, so that half-tone phase masks with a high imaging quality can be produced. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005106868-A1 |
| priorityDate |
2001-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |