| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8e75810cb7d022e16fc3e012a68ae090 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3414
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2072
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2068 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-155
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-182
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-201 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-20 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-201
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026 |
| filingDate |
2002-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2004-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_27b33f619117104019761390e876cbce
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_41c208fd1dcd8b2fde64741225c0aea0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_716e56f8a089984f2c302dc7fb1a3a57
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59cd03aa3f34857deacc6379dd355910
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_949a3b1eb8499993b280e3dbc36eb87f |
| publicationDate |
2004-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6797533-B2 |
| titleOfInvention |
Quantum well intermixing in InGaAsP structures induced by low temperature grown InP |
| abstract |
A quantum well structure having an indium gallium arsenide phosphide (InGaAsP) quantum well active region has a low temperature grown indium phosphide (LT-InP) cap layer grown on it. Defects in the cap layer are intermixed into the quantum well active region by rapid thermal annealing to produce a blue shift in the active region. The blue shift increases as the growth temperature of the LT-InP cap layer decreases or as the phosphine flow rate during production of the LT-InP layer increases. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008166632-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005058419-A1 |
| priorityDate |
2000-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |