| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_13660ac196f0e1b910683cef8840db03 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0609
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0655
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-1833 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18308 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-068 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-183 |
| filingDate |
1999-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2004-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e4596b16ebf242522be39cd601970fb1 |
| publicationDate |
2004-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6795470-B1 |
| titleOfInvention |
Semiconductor laser light source with photocurrent feedback control for single mode operation |
| abstract |
A semiconductor laser, for example a Vertical Cavity Surface Emitting Laser (VCSEL), includes one or more photoactive layers to improve the fundamental mode operation of lasing. The photoactive layer(s) provides on-axis current channeling, resulting from the selective drop in resistance around the center of the photoactive layer(s) due to photo-excitation, and counteracts"hole burning" (i.e. carrier depletion) of the center axis region of the VCSEL cylinder. The photoactive layer(s) act as a variable resistivity screen(s) whose radial aperture is controlled by the light itself. The absorption of a small fraction of the light intensity suffices for significant on-axis current peaking with minimum efficiency loss and optical mode distortion. Thus, the VCSEL has optically pumped photoactive layers that induce significant, self-regulated, on-axis current channeling and fundamental mode stability at high operation current, improving lasing operation. Further, the VCSEL photoactive layers may be fabricated using molecular beam epitaxy and thus do not require wafer post processing. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7831152-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003223756-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011110669-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009213856-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006159019-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005195855-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7822048-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8340528-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7453892-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7835375-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008151935-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7978606-B2 |
| priorityDate |
1999-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |