| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a0f26a9c2efad3ae086a108f3c04b57d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-928
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0694
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06 |
| filingDate |
2002-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2004-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7192ff9cf89f074f14b364c8567586c3 |
| publicationDate |
2004-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6784099-B1 |
| titleOfInvention |
Dual-sided semiconductor device and method of forming the device with a resistive element that requires little silicon surface area |
| abstract |
A dual-sided semiconductor device is formed on a wafer with a resistive element that is formed through the wafer. By forming the resistive element through the wafer, a resistive element, such as a large resistive element, can be formed on the wafer that requires very little silicon surface area. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007042563-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007042606-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7932182-B2 |
| priorityDate |
2001-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |