| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3a2f00e72ba6e4c09b6da573427fbed |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate |
2002-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2004-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7ac59bc4b1a0b212a2a013a5cfdf50d0 |
| publicationDate |
2004-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6770537-B2 |
| titleOfInvention |
Low dielectric constant shallow trench isolation |
| abstract |
Techniques of shallow trench isolation and devices produced therefrom are provided. The techniques of shallow trench isolation utilize foamed polymers, cured aerogels or air gaps as the insulation medium. Such techniques facilitate lower dielectric constants than the standard silicon dioxide due to the cells of gaseous components inherent in foamed polymers, cured aerogels or air gaps. Lower dielectric constants reduce capacitive coupling concerns and thus permit higher device density in an integrated circuit device. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7018918-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009001545-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005236714-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004102032-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005181593-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7239019-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6943121-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8018052-B2 |
| priorityDate |
2000-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |