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filingDate 2002-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2004-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7eb213879a3d808876e13769e95d55d7
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publicationDate 2004-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-6767833-B2
titleOfInvention Method for damascene reworking
abstract A method for avoiding processing damage to an anisotropically etched damascene feature in a reworking process including providing a first photoresist layer over a first anisotropically etched opening the first photoresist layer photolithographically patterned for forming a second anisotropically etched opening overlying the first anisotropically etched opening; blanket depositing a flowable resinous polymeric material to form a resinous layer over the first photoresist layer in a reworking process to include filling a remaining portion of the first anisotropically etched opening; removing the resinous layer and the first photoresist layer in a planarizing process to reveal an upper substrate surface; and, depositing a second photoresist layer over the upper substrate surface for photolithographic patterning of the second anisotropically etched opening overlying the first anisotropically etched opening in the reworking process.
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