http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6764808-B2

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filingDate 2002-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2004-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2004-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-6764808-B2
titleOfInvention Self-aligned pattern formation using wavelenghts
abstract An integrated circuit fabrication process for patterning features at sub-lithographic dimensions is disclosed herein. The process includes sequentially exposing a of a film of arylalkoxysilane with a photobase generator, and catalytic amount of water coated on top of a conventional lipophilic photoresist layer provided over a substrate and exposed to a radiation at a first and a second lithographic wavelengths. The first lithographic wavelength is shorter than the second lithographic wavelength. Exposure to the first lithographic wavelength causes a self-aligned mask to form within the photoresist layer.
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