| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40114
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B69-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66825
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-30 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 |
| filingDate |
2001-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2004-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_167feb79d4f6eb85f17202dfcaec77b6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b30d1e7d2bffadd46e89f22f199c2b2f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_61e6d720dfa43cf5ff065e2d6bf8b958
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e4862d5c1e505b26ba7c0ee60f3836b2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_862ad60c017deeceec471da0e0a737da |
| publicationDate |
2004-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6753569-B2 |
| titleOfInvention |
Method to fabricate a non-smiling effect structure in split-gate flash with self-aligned isolation |
| abstract |
A method is provided for forming a split-gate flash memory cell having a shallow trench isolation without the intrusion of a “smiling” gap near the edge of the trench encompassing the first polysilicon layer. This is accomplished by forming two conformal layers lining the interior walls of the trench. An exceptionally thin nitride layer overlying the first conformal oxide layer provides the necessary protection during the oxidation of the first polysilicon layer so as to prevent the “smiling” effect normally encountered in fabricating ultra large scale integrated circuits. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007018215-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007235783-A9
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8598043-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11171205-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011008970-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9559163-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11626481-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005023596-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7772672-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7078349-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8829643-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7205194-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005064661-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9929233-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10622442-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011037109-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10170545-B2 |
| priorityDate |
1999-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |