| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-168 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0392 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F212-14 |
| filingDate |
2002-01-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2004-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eed4e9abf0429e8db82433f71985fabd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4cdd139ea6e212b050c54fc6f2246ed9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3c227385de57a4cdfddedb2fc25019f1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_76ca0f9872e1d0cb0cfa9c3791008cae
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_19a9ecc29c8c924f899dc5007c243459 |
| publicationDate |
2004-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6753132-B2 |
| titleOfInvention |
Pattern formation material and pattern formation method |
| abstract |
A resist film is formed by applying, on a substrate, a pattern formation material containing a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator:Chemical Formula 1:Chemical Formula 2:wherein R1 and R2 are the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a fluorine atom; R3 is a protecting group released by an acid; and m is an integer of 0 through 5. Subsequently, the resist film is irradiated with exposing light of a wavelength shorter than a 180 nm band for pattern exposure, and a resist pattern is formed by developing the resist film after the pattern exposure. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6878502-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003134224-A1 |
| priorityDate |
2001-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |