| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdad00677b9268c26e005a9e03a7b9dd |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-75
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0641
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-3414
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2855
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7687
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-55 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-06 |
| filingDate |
2001-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2004-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c1ca088f25d04e7b36c1a36dc8daa159
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf3520dfb4cf1d8a2310c46b17a50e8f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee1dea363e4c3c5b3b7b62b3f2030b82
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_44224875a596f39ceab47ef18cf22cfd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf39682a793abd3715d0f3c51ac20366
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_60256806fb8bcc862211adccc3432d63
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_96d4c252e756cb2078af4b2564495fbe |
| publicationDate |
2004-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6750542-B2 |
| titleOfInvention |
Sputter target, barrier film and electronic component |
| abstract |
A sputter target is made of a Ti-Al alloy containing Al in the range of 1 to 30 atm %. In the Ti-Al alloy constituting the sputter target, Al exists in at least one of a solid solution state in Ti and a state in which Al forms an intermetallic compound with Ti, and variation in Al content in the entire target is limited within 10%. Furthermore, an average crystal grain diameter of the Ti-Al alloy is 500 mum or less, and variation in crystal grain diameter in the entire target is limited within 30%. A Ti-Al-N film as a barrier film is formed by using the sputter target made of the Ti-Al alloy as described above. An electronic component includes a barrier film formed on a semiconductor substrate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10287672-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007111335-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008180985-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7436013-B2 |
| priorityDate |
2000-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |