http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6727183-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2001-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2004-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f7ae5758f9d734fa33e6efd146a19b6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6c9cbe3f7248e6950215bc2f6497a3eb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1515c0e5d1f347f37c15ae2b9cd8f5a1 |
| publicationDate | 2004-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-6727183-B1 |
| titleOfInvention | Prevention of spiking in ultra low dielectric constant material |
| abstract | A novel etching method for preventing spiking and undercutting of an ultra low-k material layer in damascene metallization is described. A region to be contacted is provided in or on a semiconductor substrate. A liner layer is deposited overlying the region to be contacted. An ultra low-k dielectric layer is deposited overlying the liner layer. A damascene opening is etched through the ultra low-k dielectric layer to the liner layer overlying the region to be contacted wherein this etching comprises a high F/C ratio etch chemistry, high power, and low pressure. The liner layer within the damascene opening is etched away to expose the region to be contacted wherein this etching comprises a high F/C ratio etch chemistry, low power, and low pressure to complete formation of a damascene opening in the fabrication of an integrated circuit device. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100613376-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009132894-A1 |
| priorityDate | 2001-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.