| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3a62c92e56568bd104089aac22ca487b |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0206
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate |
2000-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2004-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3aad83d4275a480483917faa5e52c347
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_709fa93c23a12535325271e1a74a9bea |
| publicationDate |
2004-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6720225-B1 |
| titleOfInvention |
Reactive pre-clean using reducing gas during nickel silicide process |
| abstract |
A method of manufacturing a MOSFET semiconductor device comprises providing a gate electrode having first and second opposing sidewalls over a substrate having source/drain regions; providing a gate oxide between the gate electrode and the substrate; forming first and second sidewall spacers respectively disposed adjacent the first and second sidewalls; pre-cleaning the sidewall spacers; forming a nickel layer; and forming nickel silicide layers disposed on the source/drain regions and the gate electrode. The nickel silicide layers are formed during a rapid thermal anneal at temperatures from about 380 to 600° C. The pre-clean uses a hydrogen reactive system in an atmosphere comprising hydrogen and helium. Also, the pre-clean and the formation of the nickel layer are sequentially performed in a single physical vapor deposition chamber system. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011104896-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009298294-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9006108-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7704858-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8716798-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8642477-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8969209-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013146965-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008242059-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010151677-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8536060-B2 |
| priorityDate |
2000-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |