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filingDate 2003-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2004-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2004-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-6717218-B2
titleOfInvention Wiring structure formed in contact hole, manufacturing method therefor, and a display apparatus having the same
abstract A contact hole is formed, by etching that uses buffered hydrofluoric acid, in a gate insulating film made of SiO 2 and an interlayer insulating layer, formed on the gate insulating film, which is made of SiN. In this contact hole, there is formed an electrode which includes: a first protective metal layer made of a refractory metal; a wiring layer, formed on the first protective metal layer, which is made of a metal whose resistance is lower than that of the refractory metal; and a second protective metal layer, made of a refractory metal, which is formed thicker than the gate insulating film.
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