| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31625
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31629
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02131
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C8-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C8-36 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C8-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C8-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40 |
| filingDate |
1999-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2004-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_79465538fdad1e5155869f351d42a1cc |
| publicationDate |
2004-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6716725-B1 |
| titleOfInvention |
Plasma processing method and semiconductor device |
| abstract |
A wafer W is placed on a lower electrode 108 provided inside a processing chamber 102 of a CVD apparatus 100 and is heated to achieve a temperature equal to or greater than 350° C. and lower than 450° C. SiH4 and SiF4 with both their flow rates set at 20 sccm, B2H6 with its flow rate set at 7 sccm, O2 with its flow rate set at 200 sccm and Ar with its flow rate set at 400 sccm are introduced into the processing chamber 102, and a pressure within the range of 0.01 Torr~10 Torr is set. 20 W/cm<2 >power at a frequency of 27.12 MHz and 10 W/cm<2 >power at a frequency of 400 kHz are respectively applied to an upper electrode 116 and the lower electrode 108 to generate plasma, and a layer insulating film 204 constituted of an SiOB film containing F is formed on the wafer W. With the B atoms incorporated into the molecular skeleton in the network structure of the SiOB film and the F atoms lowering the hygroscopicity by preventing formation of Si-OH bonds and the like, a dielectric constant of approximately 3.0 is achieved. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7825443-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006068584-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006220186-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005020055-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006038262-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7804115-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006269699-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7521354-B2 |
| priorityDate |
1998-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |