| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3a62c92e56568bd104089aac22ca487b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-268
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4916
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28044 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-268
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2001-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2004-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_92d3e54b9bcae87bd892d8ce7365628b |
| publicationDate |
2004-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6709960-B1 |
| titleOfInvention |
Laser anneal process for reduction of polysilicon depletion |
| abstract |
A method of manufacturing a MOSFET semiconductor device includes forming a gate electrode oxide over a substrate; depositing a first layer of polysilicon over the gate oxide; implanting dopants in the first layer; depositing a second layer of polysilicon over the first layer; etching both layers to form a gate electrode; forming source/drain extensions in the substrate; forming first and second sidewall spacers; implanting dopants within the substrate to form source/drain regions in the substrate; and laser thermal annealing to activate the source/drain regions and to melt the first layer. The first layer can have a depth of about 200 to 500 angstroms, and the second layer can have a depth of about 300 to 4500 angstroms. The source/drain extensions can have a depth of about 50 to 300 angstroms, and the source/drain regions can have a depth of about 400 to 1000 angstroms. The laser thermal annealing can also melt amorphitized portions of the second layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7314812-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8536492-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005048746-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005062114-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006018639-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006199358-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7259435-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007212861-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006148215-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007222002-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7968954-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7247547-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8623748-B2 |
| priorityDate |
2001-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |