Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdad00677b9268c26e005a9e03a7b9dd |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-49111 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-456 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-181 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0603 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-49175 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-13091 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01M2-34 |
filingDate |
2002-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2004-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8771d2adf3467b65bd9c0688bb170783 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d434e2315826c31ecf72b0a663e5b61a |
publicationDate |
2004-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-6690061-B2 |
titleOfInvention |
MOS Semiconductor device |
abstract |
The semiconductor device according to an aspect of the present invention includes: a semiconductor substrate of a first conductive type; a first semiconductor layer of the first conductive type formed on the main surface of the semiconductor substrate, the impurity concentration of the first semiconductor layer being lower than that of the semiconductor substrate; a second and third semiconductor layers of a second conductive type formed on the first semiconductor layer, the second and third semiconductor layers being isolated from each other; a first and second MOS transistors MOS1 and MOS2 of the first conductive type formed in the second and third semiconductor layers, the first semiconductor layer and the semiconductor substrate serving as drains of the first and second MOS transistors; and a conductive layer. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10749517-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10355124-B1 |
priorityDate |
2001-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |