http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6689666-B1

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3a62c92e56568bd104089aac22ca487b
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823468
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
filingDate 2002-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2004-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2a85e58f07dc0569231b4498e7e74a64
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f0624342d7892372c2b38d39b0348cc1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dff763e574fbb639a01f328ecf68058f
publicationDate 2004-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-6689666-B1
titleOfInvention Replacing a first liner layer with a thicker oxide layer when forming a semiconductor device
abstract A method ( 300 ) of fabricating a semiconductor device. An oxide layer ( 220 ) is produced on a sidewall ( 211 ) of a stacked gate ( 210 ) and over a shallow trench ( 212 ) adjacent to the stacked gate. The thickness of the oxide layer is sufficient to withstand a subsequent etch. A first layer ( 222 ) of material is deposited over the oxide layer. In a first etch, the first layer is reduced to a first thickness along the sidewall. Because the oxide layer has a depth sufficient to withstand the first etch, the oxide layer serves as a protective layer for the shallow trench during the first etch. Accordingly, a protective liner layer does not need to be deposited in addition to the oxide layer.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10762502-B1
priorityDate 2002-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6521519-B2
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419555680
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6517

Total number of triples: 25.