| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aea8583efc4aa4e2a9706d789804d37b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B20-30 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B37-245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B37-044
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B37-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B69-00 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09G1-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105 |
| filingDate |
2002-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2004-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f3744c7479948e2afcbedb08b847311a |
| publicationDate |
2004-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6688969-B2 |
| titleOfInvention |
Method for planarizing a dielectric layer of a flash memory device |
| abstract |
A method for planarizing the dielectric layer of a flash memory device, wherein the method is applied on substrate of a flash memory device having a plurality of gate structures formed thereon and a protective layer is formed on the gate structures. A dielectric layer is formed on the substrate, filling the space between the gate structures and covering the protective layer. Using the protective layer as a polishing endpoint layer, a fixed base and a polishing slurry that does not contain metal ions are used to chemical mechanically polish and to planarize the dielectric layer. The fixed base includes a base and evenly distributed polishing abrasives fixed onto the base. |
| priorityDate |
2002-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |