| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b2d32a1324eb3a240649ffee8d475d63 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-485 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-482 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 |
| filingDate |
2001-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2004-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_083aefff0806fd387aa5837b95129926
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_75880264aea710411984da064983b36a |
| publicationDate |
2004-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6680254-B2 |
| titleOfInvention |
Method of fabricating bit line and bit line contact plug of a memory cell |
| abstract |
A memory cell fabrication avoiding bit line encroaching. A first insulating layer and a first masking layer are formed on a semiconductor substrate with a diffused region. The first masking layer and the first insulating layer are defined to form a first trench above the diffusion region. A second masking layer is formed to fill the first trench, and a hole is formed by removing a portion of the second masking layer above the diffusion region. A bit line contact is formed by removing a portion of the first insulating layer beneath the hole to expose the diffusion region. A bit line contact plug is formed by filling the bit line contact with a first conductive layer. The residual second masking layer and the first masking layer are removed to form a second trench. A bit line is formed by filling the second trench with a second conductive layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8399319-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016133511-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006103022-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7151314-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10903215-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9646877-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018358363-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006194426-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011260225-A1 |
| priorityDate |
2001-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |