abstract |
There is provided a semiconductor device manufacturing method which comprising the steps of forming solder bumps on an underlying metal film of a semiconductor device, and placing the semiconductor device and the solder layer in a reduced pressure atmosphere containing a formic acid to heat the solder bumps. Accordingly, the solder bumps can be formed without the use of flux not to generate voids in the solder layer, and also the cleaning required after the solder bumps are formed can be omitted. |