| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-05 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-456
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28052
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
| filingDate |
2001-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2003-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2633e5560200f77046efe752831b6cab
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_783a62d0305006f8de076ac0eb98b4e1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d01ab2217bc3beead44a3541eaa74d5 |
| publicationDate |
2003-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6657265-B2 |
| titleOfInvention |
Semiconductor device and its manufacturing method |
| abstract |
A semiconductor device includes metal silicide films formed on the surface of a source-drain region and of a gate electrode. On the metal silicide films, impurity regions are formed of a conductivity type opposite to the conductivity type of the source-drain region. This structure enables the contact resistance at the interfaces between contact layers and the metal silicide films even when the semiconductor integrated circuit is scaled down, thereby providing a high-speed semiconductor device and its manufacturing method. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7618854-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008105928-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008026571-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7564104-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008138946-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006275993-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10229982-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017288035-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7326618-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7112855-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7435670-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7276725-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005250300-A1 |
| priorityDate |
2000-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |