| abstract |
A negative resist composition, comprising: n (a) silicon-containing polymer with pendant fused moieties selected from the group consisting of fused aliphatic moieties, homocyclic fused aromatic moieties, and heterocyclic fused aromatic and sites for reaction with a crosslinking agent, n (b) an acid-sensitive crosslinking agent, and n (c) a radiation-sensitive acid generator is provided. The resist composition is used to form a patterned material layer in a substrate. |