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publicationDate 2003-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-6645856-B2
titleOfInvention Method for manufacturing a semiconductor device using half-tone phase-shift mask to transfer a pattern onto a substrate
abstract A pattern is transferred to a resist film on a wafer by a reduction projection exposure method using a half-tone phase-shift mask in which is formed a half-tone phase-shifter pattern including a thin-film pattern functioning as an attenuator and a resist pattern functioning as the photosensitive composition for phase adjustment. This method improves the accuracy of dimensions of the pattern transferred to the wafer.
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