| abstract |
Disclosed is a method for manufacturing a semiconductor device, which comprises the steps of forming a first insulating film made of a low dielectric constant material and containing carbon, subjecting the first insulating film to a surface treatment to reduce the carbon concentration of surface layer of the first insulating film, thus turning the surface layer into a low carbon concentration layer, forming a second insulating film on the low carbon concentration layer, forming a groove in the first and second insulating films for burying a metal therein, burying the metal in the groove formed in the first and second insulating films, and polishing a surface of the metal buried in the groove to thereby form a metal wiring. |