| abstract |
On a glass sheet, an undercoating layer and a conductive film containing tin oxide as a main component are formed suitably in this order. On the conductive film, a photoelectric conversion unit and a back electrode are formed, thus obtaining a thin film photoelectric conversion device. In the present invention, the absorption coefficient of this conductive film is decreased up to 1.2x103 cm-1 or less. In another embodiment of the present invention, the chlorine concentration in a conductive film is set to be 0.11 wt. % or lower and the fluorine concentration in the conductive film is equal to or higher than the chlorine concentration. In still another embodiment, in a wavelength of 550 nm, a conductive film is formed so that a glass sheet with a conductive film has a transmittance of at least 79% and a haze ratio of at least 4%. |