| abstract |
A method for fabricating a semiconductor structure includes forming a masking pattern on an ONO layer, wherein the ONO layer is on a semiconductor substrate, forming pocket regions in the substrate with the masking pattern as a doping mask, etching the ONO layer with the masking pattern as an etching mask forming residual oxide regions, etching the ONO layer with a buffered oxide etch or a plasma etch exposing regions of the substrate, and removing the mask and forming a bit-line oxide layer on the exposed regions. |