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filingDate 2001-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_051492889930a31071f19e23abc1e66d
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publicationDate 2003-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-6548406-B2
titleOfInvention Method for forming integrated circuit having MONOS device and mixed-signal circuit
abstract A method for forming an integrated circuit having metal-oxide nitride-oxide semiconductor (MONOS) memories and mixed-signal circuits is disclosed. The invention integrates non-volatile memory devices such as MONOS devices and logic devices such as MOS devices as well as PIP capacitors into SOC devices with reduced process steps.
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