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publicationNumber US-6541809-B1
titleOfInvention Method of making straight wall containers and the resultant containers
abstract A method for providing semiconductor openings having a substantially straight wall or other desired etch profile. An etchable material layer is formed having target dopant levels or other etch rate varying characteristics to compensate for the characteristics of a selected etching process to achieve the desired etch profile. The etching process may also be varied to further match the characteristics of the etchable material layer.
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