| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3a2f00e72ba6e4c09b6da573427fbed |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2000-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2003-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b5e77a212b7532be52dded09e0d0afef
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e3d9831c06a6b16b8b236c62c707e7e8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e3d1b4a49fd1a27539f0c1f1c6c63026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c6a42c74522993b8d30ce3ef60aaea9e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_18a89bf7a17f11167487821985eaf009
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_117708fc50e8ac841fd2620bffff27a6 |
| publicationDate |
2003-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6531352-B1 |
| titleOfInvention |
Methods of forming conductive interconnects |
| abstract |
The invention includes a method of forming a conductive interconnect. An electrical node location is defined to be supported by a silicon-containing substrate. A silicide is formed in contact with the electrical node location. The silicide is formed by exposing the substrate to hydrogen, TiCl 4 and plasma conditions to cause Ti from the TiCl 4 to combine with silicon of the substrate to form TiSi x . Conductively doped silicon material is formed over the silicide. The conductively doped silicon material is exposed to one or more temperatures of at least about 800° C. The silicide is also exposed to the temperatures of at least about 800° C. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004217484-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8569893-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7646099-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005280068-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004041185-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7989957-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6800517-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6780762-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004166622-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004038517-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010096672-A1 |
| priorityDate |
2000-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |