patent/US-6528879-B2

http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6528879-B2

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filingDate	2001-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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inventor	http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6c6308c9ead64cde597f04856e09d8a9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad82d1b5907ae05d1b87571f5eb48115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d8d7829d66a6242ce46a61d1a8ee7aa http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5fb924d3e4140b922416cd30b66ce49c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb840a8538b92106060a46701990b885 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4aaa108c7583db50304cd23f0d0aa40f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_68d6399122a72e18b01be01bea8afda2
publicationDate	2003-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber	US-6528879-B2
titleOfInvention	Semiconductor device and semiconductor module
abstract	A semiconductor device is provided wherein conductive paths 40, formed of crystal that grows better along the X-Y axis than along the Z axis, are embedded in an insulating resin 44, and the back surface of the conductive path 40 is exposed through the insulating resin 44 and sealed. With this arrangement, fractures of the conductive paths 40 embedded in the insulating resin 44 are suppressed.
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type	http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 140.