| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aea8583efc4aa4e2a9706d789804d37b |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76837 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-72 |
| filingDate |
2000-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2003-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_48c0938316476c13c32794d059569ff9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f3744c7479948e2afcbedb08b847311a |
| publicationDate |
2003-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6521922-B1 |
| titleOfInvention |
Passivation film on a semiconductor wafer |
| abstract |
The present invention provides a passivation film on a semiconductor wafer. The semiconductor wafer comprises a dielectric layer and a patterned conductive layer on the dielectric layer. The passivation film comprises a high density plasma (HDP) oxide layer positioned on the surface of the conductive layer and on the surface of the dielectric layer that is not covered by the conductive layer, a silicon nitride layer positioned on the HDP oxide layer, and a water-resistant layer positioned on the silicon nitride layer. The HDP oxide layer possesses good gap filling abilities to fill the spaces inside the conductive layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008096396-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9136226-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7335610-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007080378-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005275105-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7157360-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-100386852-C
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8022465-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8643151-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7662712-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8026136-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007187813-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7157331-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7755197-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006052369-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010213518-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007190806-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007108497-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004056360-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005262988-A1 |
| priorityDate |
2000-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |