| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D3-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D7-123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D3-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D7-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288 |
| filingDate |
2000-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2003-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_816f586373a5918900b41b13de9c9b34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_89f341e5500c1c2abf26b211edebf31b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8b51af23dd9aecc0e718b8d51bc4e13b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_65b09ec8ff6317b187d55b64a6d0b9ce
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c08685d1818d60744e857ba9b0e0550
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_468f28efab295110f2a004486a110279 |
| publicationDate |
2003-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6511588-B1 |
| titleOfInvention |
Plating method using an additive |
| abstract |
A plating method comprising using a plating solution containing an additive satisfying the following conditions:andwherein D is a diffusion coefficient of the additive; kappa is a surface reaction rate of adsorption or consumption of the additive; h is a height of a trench or hole; w is the width of the trench or the radius of the hole; and THETA is a ratio of (plating film growth rate in the presence of additive)/(plating film growth rate in the absence of additive), is suitable for forming the plating metal in the trench or hole having the width of 1 mum or less (trench) or the radius of 1 mum or less (hole) without generating voids, and particularly suitable for producing semiconductor devices, which can have a multilayer structure of copper wiring layers formed on a semiconductor substrate by using the plating conditions, wherein at least one layer of copper wiring layers is plated in different conditions from the rest of the copper wiring layers. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011042223-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006183257-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9797057-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7820535-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008251387-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11015260-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005272258-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7922887-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11603602-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11566339-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8440555-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10294580-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011025294-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006180472-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104790008-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006163725-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10941504-B2 |
| priorityDate |
1999-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |