http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6509648-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76819 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate | 2000-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2003-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d87507212bd83db8466d75211b67ea0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e72a98874fd97b2694001b829feeb39 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_baff81ccbaa0d5563a782961262da7d8 |
| publicationDate | 2003-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-6509648-B1 |
| titleOfInvention | Method of manufacturing semiconductor device and semiconductor device |
| abstract | A method of manufacturing a semiconductor device is obtained which is capable of evading generation of a short circuit between wirings in an upper wiring layer even if a part of an upper surface of an FSG film is exposed by variations in a production step. After a USG film ( 4 ) is deposited to a thickness of 1 Hm over an entire surface of an FSG film ( 3 ), the USG film ( 4 ) is polished and removed by a thickness of 900 nm from an upper surface thereof by the CMP method. At this time, part of an upper surface of the FSG film ( 3 ) is exposed by variations in a production step. Next, the surface of the interlayer dielectric film ( 50 ) is cleaned with a cleaning liquid whose etching rate to the FSG film ( 3 ) and etching rate to the USG film ( 5 ) are substantially the same. Such a cleaning liquid may be, for example, an ammonia hydrogen peroxide mixture of NH 4 OH:H 2 O 2 :H 2 O=1:1:20. The structure shown in FIG. 5 is dipped in the above-mentioned ammonia hydrogen peroxide mixture for 60 seconds to clean the surface of the interlayer dielectric film ( 50 ). |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007077766-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006046465-A1 |
| priorityDate | 2000-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 42.