| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1af8df51ce24ca931ae718fb747f6aa0 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-548 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-204
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-056
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-206
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-202
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-075 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
| filingDate |
2001-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2002-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b63aa311f136a9f47c29a116f24507c3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_56951bc40108ad0fb5b67b2f0b71b610
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ca110eb0b18751065fdb19f0d4ab4427
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7cafbc50bb1fddd34e158e7117405f95
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d9789dd8a071d76f85cae51f235a318d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bc08af5f15f25636dbd1782a87ce9b7f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1639c75023d6b355baceb2435e9e7dd1 |
| publicationDate |
2002-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6495392-B2 |
| titleOfInvention |
Process for producing a semiconductor device |
| abstract |
A process for producing a semiconductor device such as a photovoltaic element including a solar cell or a photosensor having a photoelectric conversion semiconductor layer formed by sequentially forming a p-type or n-type semiconductor layer composed of a non-single crystalline silicon series semiconductor material, an i-type semiconductor layer composed of a non-single crystalline silicon series semiconductor material, and an n-type or p-type semiconductor layer composed of a non-single crystalline silicon series semiconductor material on a substrate by means of plasma CVD, characterized in that at least one i-type semiconductor as said i-type semiconductor layer is formed in a discharge chamber having a cathode electrode by means of VHF plasma CVD using a silicon-containing raw material gas, wherein a VHF power of a wattage which is two times or less that of a VHF power required for decomposing 100% of said silicon-containing raw material gas is applied to said cathode electrode. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6855621-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6897559-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018197699-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018197696-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3396700-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11430642-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018197702-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3396699-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3396698-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-202018006738-U1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-202018006714-U1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7030313-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-202018006711-U1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003227082-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10971342-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11538670-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003127127-A1 |
| priorityDate |
1999-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |