| abstract |
A high electron mobility transistor (HEMT) ( 10 ) is disclosed that includes a semi-insulating silicon carbide substrate ( 11 ), an aluminum nitride buffer layer ( 12 ) on the substrate, an insulating gallium nitride layer ( 13 ) on the buffer layer, an active structure of aluminum gallium nitride ( 14 ) on the gallium nitride layer, a passivation layer ( 23 ) on the aluminum gallium nitride active structure, and respective source, drain and gate contacts ( 21, 22, 23 ) to the aluminum gallium nitride active structure. |