http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6479847-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N99-03 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 |
| filingDate | 1999-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2002-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3792241888fb2ce99c9a7eb93a7bc61f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_02ba39d68c9cd15e8521b9f584aa96a4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cc6b4fd9500d7708c080d601f34e2bd0 |
| publicationDate | 2002-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-6479847-B2 |
| titleOfInvention | Method for complementary oxide transistor fabrication |
| abstract | A method of manufacturing an integrated circuit device includes forming a laminated structure having a first side and a second side, the first side includes a first type Mott channel layer and the second side includes a second type Mott channel layer. A first source region and a first drain region is formed on the first side, a second source region and a second drain region is formed on the second side, a first gate region is formed on the second side, opposite the first source region and the first drain region and a second gate region is formed on the first side, opposite the second source region and the second drain region. The first source, the first drain and the first gate comprise a first type field effect transistor and the second source, the second drain and the second gate comprise a second type field effect transistor. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016043142-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7163864-B1 |
| priorityDate | 1999-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.