| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_89afae566b725ae78e20cf972d9bcdc7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0226
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0236 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08L61-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08K5-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08K5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08L101-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08L25-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-023
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate |
2001-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2002-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_042dbdedb708cde8839f4a19296a08fa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_918b29368c80a2d3b7671d4534129f20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7449f7938ca9fd8dbfe4a8cb0cf75111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f08ea87295ed56b59dae70df070c234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0d839018f8ce1e1df25ebb714379d4ab |
| publicationDate |
2002-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6475694-B2 |
| titleOfInvention |
Positive photoresist composition comprising a phenolic compound having both an acid-decomposable group and a naphthoquinonediazide sulfonyl group |
| abstract |
A positive photoresist composition includes (A) an alkali-soluble resin, in which part of phenolic hydroxyl groups is protected by an acid-decomposable group; (B) a quinonediazide ester; and (C) a compound which generates an acid upon irradiation of light with a wavelength of 365 nm. This positive photoresist composition can form a fine pattern of about 0.35 mum in the photolithographic process using i-ray (365 nm), is excellent in focal depth range properties in such an ultrafine region, and has a high sensitivity. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6756178-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021382390-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003134223-A1 |
| priorityDate |
2000-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |