http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6469197-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-111 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-038 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038 |
| filingDate | 2000-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2002-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a6836ccc424b774f4c8402fb1c3ea904 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_45ab10ac46b553303aa2f45b678649dd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1e7caa801e29122b957697ab1e1ca9b2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d2dceee9615b6868bdcf31f385147769 |
| publicationDate | 2002-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-6469197-B1 |
| titleOfInvention | Negative photoresist composition using polymer having 1,2-diol structure and process for forming pattern using the same |
| abstract | It is an object of the present invention to provide a negative photoresist composition for lithography, using short-wavelength light such as ArF excimer laser beam as a light source.The negative photoresist composition of the present invention is a negative photoresist composition comprising at least a polymer having a unit represented by the general formula (1)a crosslinking agent and a photo-acid generating agent, and the crosslinking agent is capable of crosslinking the polymer in the presence of an acid catalyst, whereby the polymer is insolubilized in a developer. Since the negative resist composition of the present invention is insolubilized in the developer by an action of an acid produced from the photo-acid generating agent at the exposed portion, a negative pattern can be obtained. Since the polymer has not a benzene ring, unlike a base polymer of a conventional negative resist, the polymer has high transparency to ArF excimer laser beam and also has high etching resistance because of its bridged alicyclic group. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9218969-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004197707-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-1991582-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101834253-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7211365-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012139086-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003235785-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7252924-B2 |
| priorityDate | 1998-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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