| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3a2f00e72ba6e4c09b6da573427fbed |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41775 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28562
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41783
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-24 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-04 |
| filingDate |
2001-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2002-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f81cb0d6df1dba94df7e5e6fba9e2ce7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d8d3fd998d0e9fc95b2f25792bd4de2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5cc404f978506f8351fb532e12b15537 |
| publicationDate |
2002-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6458699-B1 |
| titleOfInvention |
Methods of forming a contact to a substrate |
| abstract |
A method of forming a contact to a substrate includes forming insulating material comprising a substantially amorphous outer surface over a substrate node location. A contact opening is etched through the insulating material over the node location. The node location comprises an outwardly exposed substantially crystalline metal silicide surface. The substrate with outwardly exposed substantially crystalline metal silicide node location surface is provided within a chemical vapor deposition reactor. A gaseous precursor including silicon is fed to the chemical vapor deposition reactor under conditions effective to substantially selectively deposit polysilicon on the outwardly exposed substantially crystalline metal silicide node location surface and not on the insulating material. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006006444-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7049231-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7851309-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7176109-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004224485-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2002137269-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7514324-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7863133-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2002135029-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006019475-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003164513-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7923322-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009197379-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006019442-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005164454-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7372091-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9685536-B2 |
| priorityDate |
1998-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |