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filingDate 2001-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2002-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2002-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-6451634-B2
titleOfInvention Method of fabricating a multistack 3-dimensional high density semiconductor device
abstract A multistack 3-D semiconductor structure comprising a first level structure comprising a first semiconductor substrate and first active devices; and a second level structure comprising a SOI semiconductor structure bonded to the first level structure and further comprising second active devices; and wherein the first active devices are more heat tolerant than the second active devices is provided along with a method for its fabrication.
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